NBTI and HC Effects on PMOSFETs Having Different Compositions of HfSiON Gate Dielectrics
碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === Under 45 nm generations, it is necessary to use high-κ gate dielectrics. HfSiON is one of the most promising candidates because it has high thermal stability and inversion layer mobility comparing with other high-κ materials. In this work, the tested devices we...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jjn722 |