Study of Hot Carrier Reliability for n-MOSFET Devices with Hf-Silicate Gate Dielectrics
碩士 === 銘傳大學 === 電子工程學系碩士班 === 97 === In this thesis, we focus on the short channel devices of MOSFETs in which high-k dielectric material with Hf-Silicate is used as the gate oxide to conduct the research on its reliability of Hot Carrier Effect (HCE). For different contents of the Hf concentration...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60077258071381905411 |