Fabrication and Investigation of InGaN-based Metal-Semiconductor-Metal Photodetectors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === The main goal of this thesis is the fabrication and investigation of InGaN-based metal-semiconductor-metal (MSM) photodetectors (PDs). The samples used in this experiment were prepared by metal organic chemical vapor deposition system (MOCVD). The use of InG...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26512369454473816823 |