| Summary: | 碩士 === 國立交通大學 === 光電工程系所 === 97 === We investigate the optical and electrical properties of Indium Tin Oxide (ITO) thin film and Indium Tin Oxide (ITO) nanocolumns with the optical characterization methods including Fourier Transform Infrared Spectroscopy (FTIR) and Terahertz Time Domain Spectroscopy (THz-TDS). For different thicknesses of the Indium Tin Oxide (ITO) thin films (189nm~961nm), the plasma frequencies are determined to be from 1600 (rad.THz) to 1950 (rad.THz), and scattering times are in the range of 6~7 fs based on the free electron Drude model. The mobilities of the above Indium Tin Oxide (ITO) thin films are determined to be 32~34cm2/Vs. The carrier concentration is verified to be in the range of (2.8~4.2)×1020. The electrical properties of the thin films derived from non-contact optical techniques agree well with those determined by the conventional Hall measurement.
Similarly, the techniques are also introduced to the nanostructure materials, Indium Tin Oxide (ITO) nanocolumn. We study the optical and electrical properties of the sample with the Drude-Smith model and the effective medium approximation (EMA) which are demonstrated in the thesis.
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