Growth and Characterization of InGaAsSb Base Double Heterojunction Bipolar Transistors
博士 === 國立中央大學 === 電機工程研究所 === 97 === This dissertation describes the material growth and characterization as well as the device design, fabrication and characterization of InP-based heterojunction bipolar transistors (HBTs) with an InGaAsSb base layer. The use of InGaAsSb as a base layer in HBTs rep...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00150478987672708657 |