The Device Fabrication and Characteristic of Sub-micron GaN HEMT
碩士 === 國立中央大學 === 電機工程研究所 === 97 === In recent years, how to obtain a high power of semiconductor device is the major challenge in modern semiconductor application. The gallium nitride (GaN) device has outstanding electrical characteristics in comparison with silicon base device, such as temperature...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24905848978488204144 |