Study of Si-rich SiOx Photonic Crystal Structure

• Main Authors: Shih-min Lin, 林詩敏
• Other Authors: Chii-Chang Chen
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/8uyrdd

碩士 === 國立中央大學 === 光電科學研究所 === 97 === In this thesis, we study the photoluminescence (PL) of Si-rich SiOx materials and try to realize the Si-based photonic crystal laser. The theoretical simulation results obtained by plane wave expansion (PWE) and finite-difference time-domain (FDTD) methods show that the Q-factor can attain to 13114 in Si-rich SiOx photonic crystal structure with low refractive index by means of increasing the thickness of the active layer and modifying the distribution of the air holes to achieve well photon confinement. This result reveals the potential in realization of Si-based photonic crystal laser. The central wavelength of the measured PL spectrum of the sample is 680nm from the Si-rich SiOx film. We fabricate photonic crystal structure on this film using E-beam lithography. In the future, we will remove the Si substrate in order to avoid the absorption of the emitted photons and design the electrodes to carry out electrically pumped Si-rich SiOx photonic crystal lasers.