| Summary: | 碩士 === 國立屏東科技大學 === 材料工程所 === 97 === In this study, the micro- and nanocrystalline silicon thin films prepared by the high density plasma chemical vapor deposition, can be used to improve the electric property of the thin film transistors and solar cell devices.
This experiment is designed by the different process parameters such as the different hydrogen(H2) gas flows、deposition times and the radio frequencies(RF) power. We discussed the effects of the different processs parameters on the micro- and nanocrystalline silicon thin films. The structural, optical and electrical properties of the micro- and nanocrystalline silicon thin films are identified by Raman spectrum, FTIR, Hall Measuremnet, SEM and UV-visible etc..
From the results, hydrogen content are decreased as increase of deposition time. In this study, the best value of mobility is 8.67m2/V-s, and the bast current density can be reach to 10-9 A/cm2.
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