Analysis of microstructures and defects of GaN grown on sapphire substrates

• Main Authors: Jyun-yu Li, 李俊諭
• Other Authors: Ming-Chi Chou
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/83z98t

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 97 === The study aims at investigating the microstructures of GaN grown on sapphire substrate, including the interface between GaN and substrate as well as the InGaN/GaN multi quantum well (MQW) in GaN film. Some tiny straight lines on the surface of GaN film produced from epitaxy process can be observed by optical microscope. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to analyze the lines. When analyzing the GaN film, we discovered some V-shape defects in the InGaN/GaN and above which the roughening hollows corresponded to the defects. Therefore, we used Cathodoluminescence and TEM to further analyze the influence of V-shape defects on the growth of GaN film.