Determination of infrared transitions by photoreflectance for (0001) InN film on sapphire

• Main Authors: Ju-lan Hsu, 許汝蘭
• Other Authors: Dong-Po Wang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/q77739

碩士 === 國立中山大學 === 物理學系研究所 === 97 === The excitonic transitions of a c-oriented wurtzite InN thin film, grown on sapphire substrate by plasma-assisted molecular beam epitaxy, were studied by photoreflectance (PR) measurement from 10 to 120 K. The energies of the observed features have a tendency to decrease with increasing temperature. They are assigned to excitonic transition rather than band-to-band transitions because the features can be observed only below 110 K. The justifications of such assignments are discussed in the context of binding energies of the excitons. The PR spectra of various power of pumping beam (Ppu) were also measured. The energies of the observed features become red-shifted with decreasing Ppu. This is consistent with assignment of the excitonic transition.