The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools t...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58684087085956113901 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work.
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