The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process

The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process

碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools t...

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Main Authors: Huang, Chien-Hao, 黃建豪
Other Authors: Gong, Jeng
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/58684087085956113901
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spelling ndltd-TW-097NTHU54280272015-11-20T04:19:10Z http://ndltd.ncl.edu.tw/handle/58684087085956113901 The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process 0.35和0.25微米BCD製程之橫向式蕭特基二極體元件設計 Huang, Chien-Hao 黃建豪 碩士 國立清華大學 電子工程研究所 97 In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work. Gong, Jeng Huang, Chin-Fang 龔正 黃智方 2009 學位論文 ; thesis 85 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work.
author2 Gong, Jeng
author_facet Gong, Jeng
Huang, Chien-Hao
黃建豪
author Huang, Chien-Hao
黃建豪
spellingShingle Huang, Chien-Hao
黃建豪
The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
author_sort Huang, Chien-Hao
title The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
title_short The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
title_full The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
title_fullStr The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
title_full_unstemmed The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
title_sort design of lateral schottky barrier diode in 0.35um and 0.25um bcd process
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/58684087085956113901
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