| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 97 === In this study, zinc silicate（Zn2SiO4）phosphor thin film were prepared by the sol-gel process. The effects of solution concentration, doped amount, and heat treatment on the phosphor structure, crystallinity, microstructure, as well as luminescent properties of Zn2SiO4 thin films were investigated.
The precursor materials were metal salts and metal organic compound.with various doped amount of activator. The doped zinc silicate phosphor thin films could be prepared by the procedures of mixing, hydrolysis, petization, and condensation reaction. Transparent sols and thin films could be obtained from appropriate concentrations of water, acidic electrolyte and different dopant concentrations. It was observed that water concentration, electrolytes and dopant amounts could remarkable affect the gelation rate of solution. With different amount of water, electrolytes, and dopants, however, the thermal activity,crystalline behaviors, molecular structures as well as the infrared spectra of thin
films did not show significant difference.
The dried thin films began to form the α-Zn2SiO4 crystalline phase after heat-treatment at 800 oC. The crystallinity of the thin films increased as the
firing temperature increase.
The photoluminescence (PL) spectra showed the peak wavelengths of the green and blue-purple emission at 525 nm and 403 nm for doped-Zn2SiO4,respectively. With the increase of doped amounts in Zn2SiO4, the emission peak
has a red shift. Moreover, the heating temperature and dopant amount hadnotable influences on the luminescent intensity of phosphor thin films. With the rise of heating temperature and heating in reduce atmosphere, the luminescent intensity is enhanced significantly.
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