Investigating the interfacial band alignments at Hf-based gate dielectrics
碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 97 === The trend of shrinking gate dielectric thickness rapidly in device, the tunneling effect generates a great leakage current. According to this reason, the conventional material (SiO2) which used at gate dielectric has to replace. Hafnium is considered as the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/79182881037102906352 |