A study of post CMP cleaning beyond 45nm Cu-Low K interconnection process.
碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 97 === CMP has become standard planarization process in Cu interconnect process as device geometries scale down to sub-0.13um technology. In CMP process system uses the slurry and consumables, these materials lose in the polish system regulation remain or produce t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r63jdm |