n-MOSFET微型應力感測計之特性研究

• Main Authors: Tan,Ren-Tzung, 譚人綜
• Other Authors: 羅本喆
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/93761402500780265168

碩士 === 國防大學理工學院 === 機械工程碩士班 === 98 === In this thesis, the MOSFET with 1m channel width and 0.15m channel length was studied to be a stress sensor. Under mechanical, thermal, and thermo-mechanical coupling effects, parameters of the MOSFET devices can be extracted based on linear relationships between drain current variation and stress and/or thermal effects. After data analyses from a new measurement methodology, MOSFET’s parameters were successfully extracted. Furthermore, it is found from the measurement data that the temperature effect on n-MOSFET is larger than the p-MOSFET, but the stress effect is opposite. The parameters extracted from this study provide useful data for MOSFET stress sensor design and applications.