The epitaxial study of Ⅲ-Nitride semiconductors thin films (AlN, GaN, InN) were grown on (0001) sapphire substrate by vertical reactor MOCVD system.
博士 === 國防大學理工學院 === 國防科學研究所 === 98 === In this study, Ⅲ-Nitride semiconductors thin films (AlN, GaN, InN) were grown on (0001) sapphire substrate by vertical reactor MOCVD system. Trimethylaluminum (TMAl), Trimethylgallium (TMGa) and Trimethylindium (TMIn) were used as group Ⅲ precursors. Ammonia (N...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20253207316902573188 |