The Large-signal Model Establishment of AlGaAs/InGaAs pHEMT and it's Application for Optical Transimpedance Amplifier.
碩士 === 長庚大學 === 光電工程研究所 === 98 === High electron mobility transistors (HEMTs) based on hetero- structure of GaAs which is great promising in high-power、low-noise and high-frequency applications. It’s very suitable for use with fiber communication. This thesis contains both the small-signal and large...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22201962658386990685 |