A Watt Level Balanced Power Amplifier Using Depletion - Mode GaAs pHEMT Technology

• Main Authors: Tung Yao Chou, 周東躍
• Other Authors: H. C. Chiu
• Format: Others
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/63163571397490699650

碩士 === 長庚大學 === 電子工程學系 === 98 === This thesis designs a high watt and high power amplifier by GaAs 0.5 μm pHENT technologies of Win Semiconductors CROP. This power amplifier of design frequency is 3.5GHz for WiMAX.The thesis is divided into two parts; the first part includes chapters 1, 2 and 3. These parts were explaining the power amplifier relevant design theories and skills. The second part, including chapters 4 and 5, it is describing separately that studies and designs. The chapters 4 and 5 are core of the matter. The chapter 4 is describing design a single-ended power amplifier, and to simulate and measure third order intercept point. The simulation result, maximum output power is 32.34dBm, gain is 29.3dB, P.A.Eff is 43.8%. The measurement result, maximum output power is 28.37dBm, gain is 17.5dB, P.A.Eff is 19.04%.The Chapter 5 is describing design of Balanced power amplifier, and to measures OIP3 (Output Third Order Intercept Power) and ACPR of 3GPP modulation data. The measurement result is maximum output power is 31.5dBm, gain is 17.2dB, P.A.Eff is 18.33%.Final chapter 6 summarizes the result of designing, and discussion single-ended power amplifier and balanced power amplifier application advantage in the future.