The Study of Epitaxial Lateral Overgrowth of GaAs by LPE
碩士 === 中原大學 === 電子工程研究所 === 98 === In this study, we used bismuth (Bi) as a solvent to grow GaAs homoepilayer by liquid phase epitaxy (LPE). In addition to investigating the optimum condition for homoepitaxy from Bi solution, we also try to change super-saturated, time, and cooling rate of growth. I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63126584456019949679 |