Study of intrinsic layer thickness effects on GaAs P-I-N solar cell characteristics
碩士 === 中原大學 === 電子工程研究所 === 98 === In this thesis we studied a series of gallium arsenide (GaAs) single-junction solar cells with different thicknesses of the intrinsic layer between P and N regions. By inspecting the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40234664278211824685 |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 98 === In this thesis we studied a series of gallium arsenide (GaAs) single-junction solar cells with different thicknesses of the intrinsic layer between P and N regions. By inspecting the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (F.F.) and other possible parameters, we found out that the variation of intrinsic layer thickness in the P-I-N structures influenced the conversion efficiency of solar cells.
The method of metal organic chemical vapor deposition (MOCVD) was used to deposit the P-I-N structure single junction solar cell on N-type GaAs (100) substrates. It was found that the varied intrinsic layers thickness will change the Voc and Jsc. Both the Voc and Jsc became larger with increasing thickness of intrinsic layer. The inserted intrinsic layer will strengthen the built-in electric field in the solar cell, and hence increase electron - hole pairs separation. As a result, it can promote solar cell conversion efficiency. This method can be further used in the triple-junction solar cell in order to enhance solar cell conversion efficiency and also intentionally reduce the cost of generating power for the III-V solar cells.
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