Study of intrinsic layer thickness effects on GaAs P-I-N solar cell characteristics
碩士 === 中原大學 === 電子工程研究所 === 98 === In this thesis we studied a series of gallium arsenide (GaAs) single-junction solar cells with different thicknesses of the intrinsic layer between P and N regions. By inspecting the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (...
Main Authors: | Kai-Hsiang Lin, 林楷翔 |
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Other Authors: | Sen-Mao Liao |
Format: | Others |
Language: | zh-TW |
Published: |
2010
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Online Access: | http://ndltd.ncl.edu.tw/handle/40234664278211824685 |
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