First-principles study of electric properties of dopan precipitation in bulk silicon
碩士 === 國立高雄應用科技大學 === 電子工程系 === 98 === The scale of metal-oxide-semiconductor field-effect transistor (MOSFET) is rapidly shrinking in modern technology, where the short-channel effect (SCE) is a problem in the operation of devices. An ultra-shallow junction (USJ) and heavily-doped channel (HDC) are...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86373306875926426454 |