Highly Sensitivity AlGaN/GaN HEMTs Sensorsusing lock-in amplification technique

碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === Abstract In this dissertation, applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) as chemical sensors are investigated. The drain-source current is very sensitive to the chemical environment of the exposed gate region for a gateless HEMT....

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Bibliographic Details
Main Authors: Po-LinFang, 方柏霖
Other Authors: Yun-Chorng Chang
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/45430885461911181545

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