tudy of Recessed Enhancement-mode AlGaN/GaN/ AlGaN MIS-HEMT with High Threshold Voltage
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === AlGaN/GaN/AlGaN enhancement-mode high electron mobility transistor (HEMT) is extensively studied in recent years. However, there is still no solution to fabricate a HEMT with high threshold voltage, which means that it will cause mis-operation in high voltage o...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10668624918413250226 |