Studies of SiO2-Induced Selective Disordering of InGaAs/GaAs Quantum Wells
碩士 === 國立交通大學 === 電子研究所 === 98 === In this thesis, we aimed at investigating the selective area quantum well intermixing induced by dielectric capping layers. The InGaAs/GaAs quantum well heterostructures were capped with SiO2 and TiO2 films, and high-temperature rapid thermal annealing was applied...
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| Format: | Others |
| Language: | en_US |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99156183127113323723 |