| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 98 === The discovery of transparent oxides with high mobility realizes the transparent electronics and is being used for LCD backplane. The electrical instability of amorphous indium-gallium-zinc oxide (IGZO) thin film transistors is caused by two mechanisms：the interaction of oxygen and moisture in the ambience and the absorption of the light in near-ultraviolet region. To be electronic products, the electrical stability is a key issue. In the thesis, we studied on the sputtered SiOx and SiNx which serve as the passivation layer on the back channel to prevent the a-IGZO films from interacting with the ambience. First, film properties of the passivation layer are investigated and the effect of the passivation layer on the back channel of a-IGZO TFT is discussed. Further, the passivated devices with a stable threshold voltage as the function of time in the ambience and under light illumination are studied. The passivated a-IGZO TFTs present an improved reliability in comparison with the unpassivated devices under DC bias stress. By comparing the properties of the passivation layer, the electrical stability, and the device reliability, SiNx is found to be more suitable than SiOx as passivation for higher density in the structure and lower threshold voltage shift in the electrical properties.
|
|---|
