以原位原子層沉積氧化鋁/砷化鎵及分子束磊晶成長氧化鋁/氧化鎵(氧化釓)/砷化鎵介面電子特性研究
碩士 === 國立清華大學 === 材料科學工程學系 === 98 === In order to fulfill the performance requirements of future CMOS technologies beyond the 15 nm node, it is adamant to employ higher carrier mobility channel semiconductors such as III-V compound semiconductor GaAs plus high-k dielectrics. Nevertheless, a robust h...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24098449580876813822 |