| Summary: | 碩士 === 東海大學 === 電機工程學系 === 98 === Abstract
Consumer electronics productions with light, thin, small, and economical characteristics are pursued by wireless communications system in 21 century for providing user more convenient, faster, correcter, and higher quality information servers. Thus, high-integrated radio frequency becomes main development trend in Wireless LAN, Personal Communication system and Mobile satellite communication system. Moreover, with the greenhouse effect more and more serious, the energy-saving is also placed importance on the wireless telecommunications. In the wireless communication system, the power consumption of a power amplifier is the greatest. Thus, the parameters of power efficiency and power consumption of power amplifier are more and more valued. To reduce the power consumption and to increase power efficiency play important roles in power amplifier design.
In this thesis, a low power consumption power amplifier for IEEE 802.11 b/g/n application is designed. The power amplifier is design with class-AB operation and 0.35μm SiGe BiCMOS process. The bias of the amplifier is 3.3V. The linear power (P1dB) is 26dBm. The quiescent current is decreased to 52mA with a current mirror bias. The circuit area is 1.335 * 0.870mm2.
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