Breakdown Characteristics of HfSiON Dielectrics with Various Compositions
碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === In order to avoid the short channel effect in the MOSFET, the thickness of the dielectric has become thinner. However, the serious problems of leakage current and reliability due to the thinning oxide are also unavoidable. Therefore, using high-k materials pa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fk4ec5 |