| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 99 === This study fabricated indium-yttrium oxide (YIO) transparent thin-film transistor using a sol-gel solution at annealing temperature of 500°C. Discuss the effects of passivation and various channel length/width ratios on indium-yttrium oxide transparent thin-film transistor, respectively.
In a fixed channel width and length of different channels, the results from the experiments show: Y 6% doped and Y 12% doped indium oxide thin-film transistor with 300 nm to 50 nm channel length, the drain current is gradually increased, mobility is increased from 5.78 cm2/Vs to 10.07 cm2/Vs (Y 6%), 1.19 cm2/Vs increased to 1.69 cm2/Vs (Y 12%), and On-Off ratio and 104 (Y 6%) and 105 (Y 12%).
In the SU-8 passivation layer, we obtain higher drain current with SU-8 passivation layer, and mobility increased from 1.04 cm2/Vs to 2.08 cm2/Vs, but On-Off ratio is maintained at 105. In a long time, the transfer characteristics curve more stable of YIO thin film transistor with SU-8 passivation layer than without, the mobility is still to maintain a fixed value, and the threshold voltage showed a small increase, but remained at 18 V around.
In the AFM and SEM measurements show YIO have a smooth surface. GIXRD measurements showed that yttrium doping does not destroy In2O3 crystalline phase, the grain size 8.26 nm (Y 6%), 10.92 nm (Y 12%). Through spectral measurements showed that 87% of the high transmittance in the visible which has SU-8 passivation layer YIO film.
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