A Watt Level HBT Power Amplifier and Dual-Band pHEMT Low Noise Amplifier Using GaAs Technology

• Main Authors: Yu Cheng Liu, 劉昱呈
• Other Authors: H. C. Chiu
• Format: Others
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/39744796639693017981

碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, a watt-level power amplifier and a dual-band low noise amplifier using WIN Semiconductors GaAs foundry service were developed. This thesis was separated by two parts. In the first part, watt- level power amplifier was design by using 2 μm HBT technology and the frequency was 1.95GHz. In the second part, the compact microstrip resonant cell (CMRC) was adopted to design a dual-band low noise amplifier and the dual-band frequencies were 5.2GHz and 12GHz. For watt-level power amplifier circuit, it exhibited a power gain of 31.5 dBm, an output power of 31.6 dBm and a S21 of 28.1 dB. Additionally, the power-added efficiency (PAE) is 37.3％. The dual-band low noise amplifier features that gain about 8.5dB, noise figure 4dB, G1dB 7dBm and IIP3 -12dBm on 5.2GHz, and gain about 4.9dB, noise figure 4.1dB, G1dB 4dBm and IIP3 -9dBm on 12GHz. The power consumption was about 33 mW.