The Design and Analysis of Several Layers Operation Amplifier

碩士 === 建國科技大學 === 電機工程系暨研究所 === 99 === The present paper mainly research and comparison a serious operation amplifier, deeply. The research areas include the voltage amplitude, the phase. In order to improve the voltage gain, double layers of NMOS are used to improve the inner resistance inside oper...

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Bibliographic Details
Main Author: 施慶煌
Other Authors: 李元彪
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/15628168609704906345
Description
Summary:碩士 === 建國科技大學 === 電機工程系暨研究所 === 99 === The present paper mainly research and comparison a serious operation amplifier, deeply. The research areas include the voltage amplitude, the phase. In order to improve the voltage gain, double layers of NMOS are used to improve the inner resistance inside operation amplifier. At the same time, increased the steps, combined the optimized design and adjust, the output voltage wave is wonderful. The software HSPICE of Synopsys Company is mainly used to design circuits and simulation. As well, in the circuit design, the Complementary Metal Oxide Semiconductor devises are offered by National Chip Implementation Center. Based on the 0.35μm regular processes of Taiwan Semiconductor Manufacture Cooperator, the operation amplifier has been designed and analyzed.