Study of Gan-base Light-Emitting Diode with nano-patterned sapphire substrate
碩士 === 崑山科技大學 === 電子工程研究所 === 99 === In this paper, the study is divided into four parts. The first part (NPSS) on the production aspect ratio ranges from 2.00 to 2.50 nano-imprint technology; the second part of the fourth part is to use Pitch: 6 μm ~ 800 nm Diameter: 3 μm ~ 400 nm and depth changes...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07883404008839462743 |