Heteroepitaxial Growth of GaN Using a Ga2O3 Interlayer
碩士 === 國立中興大學 === 精密工程學系所 === 99 === This thesis has presented a new sacrificial material, gallium oxide (Ga2O3) for the chemical lift off (CLO) process of GaN epilayers from sapphire substrates. The atmosphere of metal organic vapor chemical deposition (MOCVD) used for growing crystalline GaN on Ga...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95851152673068612071 |