Investigation on Thin-Film-Transistors with Zinc-Oxide Active Layer Deposited by Atmosphere–Pressure Plasma Jet
碩士 === 國立交通大學 === 電子研究所 === 99 === In this thesis, we have successfully developed a high performance thin film transistor (TFT) with zinc oxide active layer deposited by atmosphere pressure plasma (APP) jet. Zinc oxide films show strongly preferred (002) orientation in XRD analysis. Zinc oxide films...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/94943208221372027043 |