Surface structures of polycrystalline silicon solar cell fabricated by nano-sphere lithography

• Main Authors: Wei Chen, 陳煒
• Other Authors: Cheng-Chung Lee
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/11096099342035427744

碩士 === 國立中央大學 === 光電科學研究所 === 99 === In this research, three types of nanostructures including cone, frustum, and bullet structures have been fabricated using nanosphere lithography on polycrystalline silicon substrates. Then, an antireflection coating (ARC) of ZnO film was deposited on the nanostructure using atomic layer deposition (ALD) process to reduce surface reflection. The reflectivity of the substrates with the different nanostructures was measured to investigate the relationship of the reflectivity with both depth and shapes. Finally, the nanosphere lithography technique was applied to the non-polished polycrystalline silicon substrate for the cost reduction of the solar-cell mass-production. The results show, the average reflectance of the cone and frustum structures decreased as the height increasing. The average reflectance of the bullet structures decreased as the vertex angle decreasing. The reflectance of Bullet structures is lower than the reflectance of cone and frustum structures. When the nanosphere lithography was applied to the polished polycrystalline silicon substrates, the average reflectance is 0.69% in the spectral range of 300~1000nm for the incident angle of 8o. The average reflectivity is less than 3.0% in the incident angle less than 60o in the spectral range of 400~850nm. At that moment the short-current is arrived 36.55mA/cm2. When nanosphere lithography was applied to the non-polished polycrystalline silicon substrates, the average reflectance is 1.72% in the spectral range of 300 ~1000nm for incident angle of 8o. The average reflectivity is less than 3.39% in the incident angle less than 60o in the spectral range of 400 ~ 850nm. At that moment the short-current is arrived 36.18mA/cm2.