Simulation and Design of 4H SiC Schottky Diode and Si IGBT
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === Transistor scaling down has been performed in driving CMOS performance improvement for past two decades. By approaching the physical limits, “more than Moore” is a new path to the next decades and application requirement and customer needs will determine which t...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14569180733331015732 |