| Summary: | 碩士 === 中原大學 === 物理研究所 === 100 === In this study, we used the sol-gel method to prepare ZnO films and Al doped ZnO films. We investigated how the speed of spin coating, annealing temperature and annealing atmosphere affect the ZnO films, and how the Al doping affects the AZO films.
In our experiments, we used scanning electron microscope (SEM) to analyze surface morphology, energy dispersive X-ray spectrometer (EDS) to measure sample composition, X-ray diffraction (XRD) to analyze crystal phase, photoluminescence (PL) to measure band gap, the van der Pauw method to measure resistivity, and UV/VIS spectrometer to measure transmittance of the ZnO and AZO films. Then we used these results to explain our experimental data.
The resistivity of pure ZnO films prepared on glass substrates is about 30 Ω-cm. It reduces to about 0.02 Ω-cm after Al doping, and the transmittance of the films is higher than 80% in visible region. To decrease the resistivity, we annealed the sample in Ar to increase the vacancies of oxygen. Then we found that the resistivity of pure ZnO films decreases to ~8 Ω-cm and the resistivity of AZO films decreases to ~3×10-3 Ω-cm. The transmittance is still kept higher than 80%.
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