Formation and properties of organic-inorganic hybrid nanostructure device
碩士 === 逢甲大學 === 光電研究所 === 100 === N-doped ZnO thin-films were developed by sol-gel process. The doping concentration ratio of N and Al atom is about 1~4 % in thin-film. The sheet resistance is about 10000 cm. A red shift of photoluminescence was observed when the concentration of N dopant increases....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61684006084761585514 |