Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process

碩士 === 崑山科技大學 === 電子工程研究所 === 100 === Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to o...

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Main Authors: Zong-Sian Tsai, 蔡宗憲
Other Authors: Yi-Cheng Liou
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/92703932896006529462
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spelling ndltd-TW-100KSUT54280132015-10-13T21:27:24Z http://ndltd.ncl.edu.tw/handle/92703932896006529462 Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process 反應燒結法製備A4Nb2O9 (A=Mg,Ni)微波介電陶瓷之研究 Zong-Sian Tsai 蔡宗憲 碩士 崑山科技大學 電子工程研究所 100 Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to obtain MN with near-zero τf. Single-phase MN ceramics were obtained by adding excess Mg(OH)2. Mg4Nb2O9 along with minor MgNb2O6 were found in 2h sintering MN. Mg0.652Nb0.598O2.25 phase appeared at 1200oC sintering. The optimum density 4.26g/cm3 and shrinkage 21.92% were obtained at 1300oC/6h sintering. εr=10.74,Qxf=231,368GHz(12.18GHz),τf=-40.24 ppm/oC were obtained at 1170oC/2h. MNCT and MNST ceramics were composed of Mg4Nb2O9 with CaTiO3 and SrTiO3,respectively. MNCT with τf=-6.55 and MNST with τf=-18.21ppm/oC were obtained. MNH5 ceramics with single-phase Mg4Nb2O9 could be obtained and no second phase was detected. The optimum density 4.14g/cm3 and shrinkage 23.67% were obtained at 1300oC/2h sintering. εr=10.37,Qxf =203,620GHz (12.68GHz),τf=-20.81 ppm/oC were obtained at 1170oC/4h. NiNb2O6 along with NiO formed at 1170 to 1300oC/2h sintering,NN. Ni4Nb2O9 phase appeared at 1300oC sintering and Ni4Nb2O9 became major phase at sintering temperature >1300 oC. The optimum density 5.71g/cm3 and shrinkage 13.97% were obtained. εr=13.23,Qxf=21,085GHz (10.53GHz),τf=-13.58 ppm/oC were obtained at 1350oC/2h sintering. With a heating rate and cooling rate of 30oC/min, NN of pure Ni4Nb2O9 could be obtained at 1300oC/2h sintering. Yi-Cheng Liou 劉依政 2012 學位論文 ; thesis 158 zh-TW
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language zh-TW
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description 碩士 === 崑山科技大學 === 電子工程研究所 === 100 === Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to obtain MN with near-zero τf. Single-phase MN ceramics were obtained by adding excess Mg(OH)2. Mg4Nb2O9 along with minor MgNb2O6 were found in 2h sintering MN. Mg0.652Nb0.598O2.25 phase appeared at 1200oC sintering. The optimum density 4.26g/cm3 and shrinkage 21.92% were obtained at 1300oC/6h sintering. εr=10.74,Qxf=231,368GHz(12.18GHz),τf=-40.24 ppm/oC were obtained at 1170oC/2h. MNCT and MNST ceramics were composed of Mg4Nb2O9 with CaTiO3 and SrTiO3,respectively. MNCT with τf=-6.55 and MNST with τf=-18.21ppm/oC were obtained. MNH5 ceramics with single-phase Mg4Nb2O9 could be obtained and no second phase was detected. The optimum density 4.14g/cm3 and shrinkage 23.67% were obtained at 1300oC/2h sintering. εr=10.37,Qxf =203,620GHz (12.68GHz),τf=-20.81 ppm/oC were obtained at 1170oC/4h. NiNb2O6 along with NiO formed at 1170 to 1300oC/2h sintering,NN. Ni4Nb2O9 phase appeared at 1300oC sintering and Ni4Nb2O9 became major phase at sintering temperature >1300 oC. The optimum density 5.71g/cm3 and shrinkage 13.97% were obtained. εr=13.23,Qxf=21,085GHz (10.53GHz),τf=-13.58 ppm/oC were obtained at 1350oC/2h sintering. With a heating rate and cooling rate of 30oC/min, NN of pure Ni4Nb2O9 could be obtained at 1300oC/2h sintering.
author2 Yi-Cheng Liou
author_facet Yi-Cheng Liou
Zong-Sian Tsai
蔡宗憲
author Zong-Sian Tsai
蔡宗憲
spellingShingle Zong-Sian Tsai
蔡宗憲
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
author_sort Zong-Sian Tsai
title Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
title_short Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
title_full Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
title_fullStr Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
title_full_unstemmed Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
title_sort preparation of a4nb2o9 (a=mg,ni) microwave dielectric ceramics by reaction-sintering process
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/92703932896006529462
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