Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process
碩士 === 崑山科技大學 === 電子工程研究所 === 100 === Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to o...
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ndltd-TW-100KSUT54280132015-10-13T21:27:24Z http://ndltd.ncl.edu.tw/handle/92703932896006529462 Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process 反應燒結法製備A4Nb2O9 (A=Mg,Ni)微波介電陶瓷之研究 Zong-Sian Tsai 蔡宗憲 碩士 崑山科技大學 電子工程研究所 100 Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to obtain MN with near-zero τf. Single-phase MN ceramics were obtained by adding excess Mg(OH)2. Mg4Nb2O9 along with minor MgNb2O6 were found in 2h sintering MN. Mg0.652Nb0.598O2.25 phase appeared at 1200oC sintering. The optimum density 4.26g/cm3 and shrinkage 21.92% were obtained at 1300oC/6h sintering. εr=10.74,Qxf=231,368GHz(12.18GHz),τf=-40.24 ppm/oC were obtained at 1170oC/2h. MNCT and MNST ceramics were composed of Mg4Nb2O9 with CaTiO3 and SrTiO3,respectively. MNCT with τf=-6.55 and MNST with τf=-18.21ppm/oC were obtained. MNH5 ceramics with single-phase Mg4Nb2O9 could be obtained and no second phase was detected. The optimum density 4.14g/cm3 and shrinkage 23.67% were obtained at 1300oC/2h sintering. εr=10.37,Qxf =203,620GHz (12.68GHz),τf=-20.81 ppm/oC were obtained at 1170oC/4h. NiNb2O6 along with NiO formed at 1170 to 1300oC/2h sintering,NN. Ni4Nb2O9 phase appeared at 1300oC sintering and Ni4Nb2O9 became major phase at sintering temperature >1300 oC. The optimum density 5.71g/cm3 and shrinkage 13.97% were obtained. εr=13.23,Qxf=21,085GHz (10.53GHz),τf=-13.58 ppm/oC were obtained at 1350oC/2h sintering. With a heating rate and cooling rate of 30oC/min, NN of pure Ni4Nb2O9 could be obtained at 1300oC/2h sintering. Yi-Cheng Liou 劉依政 2012 學位論文 ; thesis 158 zh-TW |
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碩士 === 崑山科技大學 === 電子工程研究所 === 100 === Microwave dielectric ceramics Mg4Nb2O9 (MN) and Ni4Nb2O9 (NN) prepared by a reaction-sintering process were investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. CaTiO3 and SrTiO3 were used to obtain MN with near-zero τf. Single-phase MN ceramics were obtained by adding excess Mg(OH)2. Mg4Nb2O9 along with minor MgNb2O6 were found in 2h sintering MN. Mg0.652Nb0.598O2.25 phase appeared at 1200oC sintering. The optimum density 4.26g/cm3 and shrinkage 21.92% were obtained at 1300oC/6h sintering. εr=10.74,Qxf=231,368GHz(12.18GHz),τf=-40.24 ppm/oC were obtained at 1170oC/2h. MNCT and MNST ceramics were composed of Mg4Nb2O9 with CaTiO3 and SrTiO3,respectively. MNCT with τf=-6.55 and MNST with τf=-18.21ppm/oC were obtained. MNH5 ceramics with single-phase Mg4Nb2O9 could be obtained and no second phase was detected. The optimum density 4.14g/cm3 and shrinkage 23.67% were obtained at 1300oC/2h sintering. εr=10.37,Qxf =203,620GHz (12.68GHz),τf=-20.81 ppm/oC were obtained at 1170oC/4h. NiNb2O6 along with NiO formed at 1170 to
1300oC/2h sintering,NN. Ni4Nb2O9 phase appeared at 1300oC sintering and Ni4Nb2O9 became major phase at sintering temperature >1300 oC. The optimum density 5.71g/cm3 and shrinkage 13.97% were obtained. εr=13.23,Qxf=21,085GHz (10.53GHz),τf=-13.58 ppm/oC were obtained at 1350oC/2h sintering. With a heating rate and cooling rate of 30oC/min, NN of pure Ni4Nb2O9 could be obtained at 1300oC/2h sintering.
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author2 |
Yi-Cheng Liou |
author_facet |
Yi-Cheng Liou Zong-Sian Tsai 蔡宗憲 |
author |
Zong-Sian Tsai 蔡宗憲 |
spellingShingle |
Zong-Sian Tsai 蔡宗憲 Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
author_sort |
Zong-Sian Tsai |
title |
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
title_short |
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
title_full |
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
title_fullStr |
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
title_full_unstemmed |
Preparation of A4Nb2O9 (A=Mg,Ni) Microwave Dielectric Ceramics by Reaction-Sintering Process |
title_sort |
preparation of a4nb2o9 (a=mg,ni) microwave dielectric ceramics by reaction-sintering process |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/92703932896006529462 |
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