Performance Improvement of Organic Thin-Film Transistors using TPD Buffer Layer in Metal/Organic Interface

• Main Authors: Yi-MinLin, 林義珉
• Other Authors: Tzong-Yow Tsai
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/13827907672022232358

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 100 === The purpose of this research is to improve the field effect carrier mobility (μFE) of organic thin film transistor. Our research pay attention at the interface between the top electrode and organic channel layer. At first, we change the evaporating rate of top electrode from 0.5 Å/s to 3 Å/s. The result of this experiment is that the saturation current increase from ∣-8.6∣μA to∣-13.5∣μA, and the field effect carrier mobility increase from 0.28 cm2/Vs to 0.46 cm2/Vs. Second, we inserted the TPD buffer layer between top electrode and organic channel layer. At this experiment we found the optimal thick of the buffer layer is 20 Å. The optimal device’s saturation current is ∣-69.7∣μA, and the field effect carrier mobility increase to 1.10 cm2/Vs.