Characteristics of Gate Dielectrics under Nanoscale Current/Voltage/ Mechanical Stresses
博士 === 國立暨南國際大學 === 電機工程學系 === 100 === This thesis is divided into two parts. The first part focuses on the degradation and breakdown characteristics at nanoscale of silicon dioxide (SiO2) gate insulator, which is an extension of the previous research work of our Lab. For both the metal-oxide-semico...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/94844759545921066074 |