W-band Receiver Circuit Design
碩士 === 國立交通大學 === 電子研究所 === 100 === In recent days, the integrated circuits manufacturing in semiconductor technology is well development and mature. Using the complementary metal oxide semiconductor (CMOS) to replace the traditional III-V compound process in microwave and MM-wave circuits is the tr...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78302418426025942422 |
| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 100 === In recent days, the integrated circuits manufacturing in semiconductor technology is well development and mature. Using the complementary metal oxide semiconductor (CMOS) to replace the traditional III-V compound process in microwave and MM-wave circuits is the trend in nowadays. This thesis will present the design techniques and methods of the receiver sub-circuits operating in W-band by using CMOS advanced technology.
There are two key components in a receiver system are mentioned in this thesis. The first one is the low noise amplifier (LNA) which can amplify the weak signal received by the antenna. When someone designs a circuit close to the cutoff frequency of the transistor, the poor performance of the transistor is a critical issue (low gain, noisy). This is the most challenging thing in designing the W-band receiver circuit. This thesis would mention some experiences and techniques in the following chapters.
The other component is the W-band direct conversion mixer. This circuit down converts the whole W-band signals to DC with a fixed LO signal. This means that the circuit has very broad band IF frequency and really high LO frequency. The key points and design methods will be presented and discussed in this thesis.
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