Study of GaN epilayer quality improvement using defect selective passivation technique

• Main Authors: Hsieh, Chi-Ying, 謝奇穎
• Other Authors: Lin, Chien-Chung
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/21503166390545428269

碩士 === 國立交通大學 === 影像與生醫光電研究所 === 100 === In recent decades, the III-nitrides become an interesting class of wide band-gap materials and play an important role in semiconductor devices. GaN-based light emitting devices have attracted great attention in last decade due to its importance in solid state lighting applications. The GaN-based device are full color LED displays, white LEDs and high capacity storage devices. However, GaN-LEDs still require further improvement of optical output power. To successfully fabricate high efficient LED depends on the high quality GaN epilayer with low defect density. In previous work, we demonstrated that the defect selective passivation method could reduce defect density and enhance LED performance. In this thesis, we simplify the process of defect selective passivation technique by spin-coating silica nanospheres on GaN surface to block the propagation of dislocations. Moreover, we apply defect selective passivation technique to fabricate high efficient LED. The analysis of photoluminescence, cathodoluminecence and electroluminescence show the crystal quality of GaN epilayer is improved.