Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy
碩士 === 國立中山大學 === 物理學系研究所 === 100 === Semiconductor band-gap energy can be measured by using photoreflectance (PR) spectroscopy. It used a pump-beam and a probe-beam and measure modulated reflectance (DR) of the probe-beam by chopping on and off the pump-beam. The photon-energy of the pump-beam has...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48174600763745004413 |