Application Technique of Stacking High-k Dielectric Materials on MOS Device

博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === The result of this dissertation was divided into two parts. In the first part, it includes anodic oxidation (anodization) process,alternating-current anodization compensation technique and tandem structure to improve high-k dielectrics materials on Si subst...

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Bibliographic Details
Main Authors: Che-Yu Yang, 楊哲育
Other Authors: 胡振國
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/62265826364008893915