Gallium Nitride/Indium Gallium Nitride Light-Emitting Diode Fabricated by MOCVD-Effects of Patterned Sapphire Substrate, Buffer Layer, and Antiparallel Polar Domains on Device Properties
博士 === 國立臺灣科技大學 === 應用科技研究所 === 100 === In this study, we fabricated gallium nitride/indium gallium nitride light-emitting diode (LED) by metalorganic chemical vapor deposition (MOCVD) technique. The effects of introducing a ZnO buffer layer prior to the low-temperature GaN buffer layer growth, vary...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ey6732 |