Degradation of Electroplating Bath and its Influence on Copper Electrodeposition for Through-Silicon Via Filling
碩士 === 國立臺北科技大學 === 資源工程研究所 === 100 === Copper eletrodeposition in through silicon via (TSV) is the key technology for three-dimensional integrated circuits. It has been confirmed that Polyethylene glycol(PEG) and Bis-(3-sodiumsulfopropyl disulfide) (SPS) as additives are helpful to fill the via for...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67fku2 |