Electrochemical Analysis of Copper Electrodeposition for Through-SiliconVia Filling
碩士 === 淡江大學 === 化學工程與材料工程學系碩士班 === 100 === Copper electrodeposition in through silicon via (TSV) is the key technology for the development of three-dimensional integrated circuits. This study uses rotating disk electrode (RDE) to predict the copper electrodeposition in TSV. For this experiment, pote...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67447966757223866640 |